Characterization of p-GaN1−xAsx/n-GaN PN junction diodes
نویسندگان
چکیده
منابع مشابه
Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 2016
ISSN: 0268-1242,1361-6641
DOI: 10.1088/0268-1242/31/6/065020